A 2Gs/s HBT sample and hold

Ken Poulton,J S Kang,John Corcoran,K C Wang,P M Asbeck,M C F Chang, G J Sullivan

Gallium Arsenide Integrated Circuit（1988）

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摘要

The authors describe a Schottky-diode sample-and-hold (S/H) circuit fabricated in an AlGaAs-GaAs heterojunction bipolar transistor (HBT) process. The transistors exhibit an f/sub T/ of over 50 GHz. The S/H circuit operates at up to 2G samples/s, with distortion below-40 dBc up to and beyond the Nyquist input frequency of 1 GHz.<>

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关键词

iii-v semiconductors,aluminium compounds,bipolar integrated circuits,gallium arsenide,heterojunction bipolar transistors,sample and hold circuits,50 ghz,algaas-gaas,hbt,s/h circuit,schottky-diode,heterojunction bipolar transistor,sample/hold circuit,schottky diode

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