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Characterization and Modeling of Neutron Induced Transient Response Changes in Si:As IBC Detectors

RE CLEMENT,JC BOISVERT,PJ SULLIVAN

IEEE transactions on nuclear science（1991）

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Abstract
We have conducted an analysis of the temporal response of an IBC detector in the presence of neutron generated compensating acceptor states under typical operating conditions. A model is presented which describes the observed transient response changes in the regime dominated by dielectric relaxation.
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Key words
Neutrons,Transient response,Impurities,Character generation,Infrared detectors,Dielectric materials,Temperature,Silicon,Conductivity,Oceans
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