2.4 V-operated enhancement-mode power PHEMTs for personal handy-phone system application

Chen, S.H.,Chang, E.Y.,Lin, Y.C., Lee, C.S.

Microwave and Optoelectronics Conference, 2001. IMOC 2001.Proceedings of the 2001 SBMO/IEEE MTT-S International （2001）

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摘要

Enhancement-mode pseudomorphic high electron mobility transistors (E-PHEMTs) were developed for low voltage wireless communication applications. Under drain bias of 3.6 V, the device delivered a high output power density of 265.25 mW/mm (29.5 dBm) with a power-added-efficiency (PAE) of 50.54%. Under 1.9 GHz π/4-shifted quadrature phase shift keying (QPSK) modulation signal, the 3.36 mm devices meet personal handy-phone system (PHS) specification at an output power level of 22.42 dB with PAE of 35.12% under 2.4 V drain bias. The E-PHEMTs developed are adequate for low-voltage-operated PHS application.

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关键词

uhf field effect transistors,cellular radio,current density,power hemt,1.9 ghz,2.4 to 3.6 v,3.36 mm,50.54 percent,algaas-ingaas,lv wireless communication applications,phs specification,qpsk modulation signal,enhancement-mode power phemts,high output power density,low voltage applications,personal handy-phone system specification,pseudomorphic phemt,pseudomorphic high electron mobility transistors,quadrature phase shift keying,power generation,threshold voltage,phemt,gold,electron mobility,phs,power added efficiency,power density,indexing terms,low voltage,wireless communication

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