In-situ Acoustic Thermometry and Tomography for Rapid Thermal Processing
Washington, DC, USA（1993）
摘要
Temperature dependent velocity of acoustic waves guided by the silicon wafer is used to measure its temperature from 20/spl deg/C to 1000/spl deg/C with attainable accuracy of /spl plusmn/1/spl deg/C. The acoustic temperature sensor has been installed and tested in a rapid thermal processing environment. Temperature mapping is obtained by measuring the acoustic wave velocity along different paths on the wafer and applying tomographic inversion techniques.<>
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关键词
acoustic imaging,acoustic transducers,acoustic wave velocity,elemental semiconductors,rapid thermal processing,silicon,temperature measurement,20 to 1000 C,Si,acoustic temperature sensor,acoustic thermometry,acoustic tomography,guided acoustic wave velocity,in-situ measurement,rapid thermal processing,silicon wafer,temperature mapping,tomographic inversion
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