A Comparison of High-Energy Electron and Cobalt-60 gamma-Ray Radiation Testing

Megan C Casey,Alvin J Boutte,Michael J Campola,M A Carts,Edward P Wilcox,Cheryl J Marshall,Anthony M Phan,Jonathan A Pellish,Wesley A Powell,M A Xapsos

Radiation Effects Data Workshop（2012）

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摘要

In this paper, a comparison between the effects of irradiating microelectronics with high energy electrons and Cobalt-60 gamma-rays is examined. Additionally, the effect of electron energy is also discussed. A variety of part types are investigated, including discrete bipolar transistors, hybrids, and junction field effect transistors.

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关键词

cobalt,junction gate field effect transistors,space vehicle electronics,cobalt-60 γ-ray radiation testing,cobalt-60 gamma-ray,discrete bipolar transistor,electron energy,high-energy electron,hybrid transistor,irradiating microelectronics,junction field effect transistor,spacecraft electronics,degradation

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