10gbps All Silicon Apd Optical Receiver
Lasers and Electro-Optics Society, 2002. LEOS 2002. The 15th Annual Meeting of the IEEE（2002）
摘要
Summary form only given. In this paper, we report an all silicon optical receiver operating at 10 Gbps. A high quantum efficiency-bandwidth product was achieved by operating the photodiode in the avalanche regime. Planar p-i-n photodiodes were fabricated using standard CMOS technology on commercially available 2 μm SOI substrates. The photodiodes exhibited 3 dB optical bandwidth greater than 8 GHz. At higher bias, avalanche gain was observed. In this work, the photodiode was wire-bonded to a 10 Gbps transimpedance amplifier (TIA).
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关键词
cmos integrated circuits,avalanche photodiodes,integrated optoelectronics,optical receivers,p-i-n photodiodes,silicon-on-insulator,10 gbit/s,10 gbps all silicon apd optical receiver,2 micron,3 db optical bandwidth,8 ghz,cmos technology,soi substrate,si-sio2,avalanche gain,avalanche regime,high quantum efficiency-bandwidth product,planar p-i-n photodiodes,transimpedance amplifier,wire bonding,quantum efficiency,silicon on insulator
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