Drift dominated InP photodetectors with high quantum efficiency

Yanning Sun,J C Campbell,Shuling Wang,A L Beck,An Chen,A Yulius,Jerry M Woodall

ieee（2003）

引用 2|浏览5

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摘要

We present a drift dominated InP N-I-P photodetector, which can more efficiently collect the carriers generated by photon absorption by drift created by an electric field throughout the active layer instead of by diffusion associated with normal PN or PIN junction diodes and results in high and flat spectral response from UV to near infrared. It also promises to be an avalanche photodiode with high responsitivity, high gain-bandwidth product, and low noise.

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关键词

iii-v semiconductors,avalanche photodiodes,indium compounds,infrared detectors,p-i-n photodiodes,photodetectors,semiconductor device noise,ultraviolet detectors,inp,inp n-i-p photodetector,pin junction diodes,pn junction diodes,uv to near infrared range,active layer,avalanche photodiode,diffusion,drift dominated inp photodetectors,electric field,high flat spectral response,high gain-bandwidth product,high quantum efficiency,high responsivity,low noise,photon absorption,absorption,degradation,near infrared,diodes,silicon,doping,quantum efficiency

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