Optical detection of coherent GHz phonon generation in a high power GaN/AlGaN microwave FET

Junghoon Song,Qiang Zhang,William R Patterson,A V Nurmikko,M J Uren,K P Hilton,R S Balmer,Thomas Martin

ieee international symposium on compound semiconductors（2003）

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摘要

The time-varying electron density in the channel of a microwave GaN/AlGaN FET gives raise to GHz coherent phonon generation due to the screening of the giant piezoelectric fields, which we measure optically. Such propagating nonthermal channels of energy release may be of relevance to future high power devices.

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关键词

iii-v semiconductors,aluminium compounds,electro-optical effects,electron density,gallium compounds,microwave field effect transistors,optical sensors,phonons,shielding,wide band gap semiconductors,gan-algan,gan/algan microwave fet,coherent ghz phonon generation,giant piezoelectric fields,nonthermal channels,optical detection,power devices

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