Polarization insensitive interferometric wavelength converter with tensile strained InGaAs/InGaAsP MQW structure

Schwabisch-Gmund(1996)

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摘要
Compact monolithic wavelength converters based on integrated three-port Mach-Zehnder interferometer (MZI) structure are realized for the first time with strongly reduced polarization sensitivity due to incorporation of tensile strained MQW active layers. The (InGaAs/InGaAsP) MQW structures are grown by LP MOVPE on full 2 inch n-InP substrates. By fine adjustment of tensile strain (varied between -0.3 and -0.45%) the optimum conditions to achieve equalized gain for TE and TM modes have been identified in accordance with modelling results. Assessment of static and dynamic all-optical wavelength conversion performance has been done for the MZI devices. Best results for TE/TM ratio are obtained for MZI wavelength converters with -0.34% tensile strain. A TE/TM ratio ⩽1 dB is achieved within a 20 nm wavelength conversion window. Penalty-free 2.5 Gbit/s polarization-insensitive all-optical wavelength conversion including extinction ratio improvement is demonstrated
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iii-v semiconductors,mach-zehnder interferometers,gallium arsenide,gallium compounds,indium compounds,integrated optics,optical communication equipment,optical fabrication,optical frequency conversion,optical waveguides,semiconductor quantum wells,vapour phase epitaxial growth,2.5 gbit/s,ingaas-ingaasp,ingaas/ingaasp,ingaas/ingaasp mqw structure,inp,lp movpe,mqw structures,te modes,te/tm ratio,tm modes,all-optical wavelength conversion performance,equalized gain,extinction ratio,integrated three-port mach-zehnder interferometer,monolithic wavelength converters,n-inp substrate,optimum conditions,polarization insensitive interferometric wavelength converter,polarization sensitivity,tensile strain,tensile strained mqw active layers,tensile strained mqw structure,wavelength conversion window,mach zehnder interferometer,wavelength division multiplexing,epitaxial growth,optical interferometry,tellurium
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