Silicon Quantum-Dot Transistors Operating above 100 K

Leobandung, E.,Lingjie Guo,Yun Wang,Chou, S.Y.

Charlottesville, VA, USA（1995）

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摘要

Reports the fabrication and characterization of unique silicon quantum-dot transistors (QDTs) that demonstrate quantum as well as single-electron Coulomb blockade effects at temperatures above 100 K. They are also the first Si transistors that show interference between different modes of quantum waves in a cavity. The transistors were fabricated on SIMOX (separation by implanted oxygen) silicon wafer with the top silicon layer 70 nm thick.

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关键词

SIMOX,elemental semiconductors,quantum interference devices,semiconductor quantum dots,semiconductor technology,silicon,70 nm,SIMOX,Si,quantum wave modes,quantum-dot transistors,semiconductor device characterization,semiconductor device fabrication,single-electron Coulomb blockade effects

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