Deep ultraviolet emission in AlGaN-based quantum wells on bulk AlN substrates

Qhalid Fareed,Rakesh K Jain,R Gaska,G Tamulaitis, Ismail Yilmaz,M S Shur,E Kuokstis,A Khan

international semiconductor device research symposium（2003）

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摘要

We studied the structural properties and optical properties of AlGaN-GaN multiple quantum wells (MQW) in a wide range of Al compositions form 45% to 100%. The characterisation by using X-ray, photoluminescence and atomic force microscopy techniques indicated high quality of the grown layers. The shortest emission wavelength measured in AlGaN-based MQWs is around 243 nm.

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关键词

iii-v semiconductors,x-ray diffraction,aluminium compounds,atomic force microscopy,gallium compounds,photoluminescence,semiconductor epitaxial layers,semiconductor quantum wells,semiconductor superlattices,wide band gap semiconductors,243 nm,algan-gan,algan-gan mqw,algan-gan multiple quantum wells,aln,deep ultraviolet emission,x ray diffraction,quantum well

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