High-brightness light-emitting diodes grown by MBE on ZnSe substrates

D B Eason,Zhiwei Yu,W C Hughes,C Boney, J W Cook,J F Schetzina,G Cantwell,W C Harsch

Lasers and Electro-Optics Society Annual Meeting, 1994. LEOS '94 Conference Proceedings. IEEE（1994）

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摘要

High-brightness blue and green light-emitting diodes (LEDs) operating at peak wavelengths in the range 489-514 nm have been successfully synthesized, processed, and tested. The high-brightness LEDs are II-VI heterostructures grown by molecular beam epitaxy (MBE) using (100) ZnSe substrates. The double-heterostructure (DH) LED devices consist of an n-type ZnSe:Cl layer, an active region consisting either of a ZnCdSe MQW (blue) or a ZnTeSe layer (green), and a p-type ZnSe:N layer deposited using a nitrogen plasma source

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关键词

light emitting diodes,(100) znse substrates,489 to 514 nm,ii-vi materials,mbe growth,znse-zncdse,znse-zntese,blue leds,double heterostructures,green leds,high-brightness light-emitting diodes,molecular beam epitaxy,light emitting diode,nitrogen

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