A 6 watt Ka-band MMIC power module using MMIC power amplifiers

D L Ingram, D I Stones,T W Huang, M Nishimoto,H Wang,M Siddiqui, D Tamura, J R Elliott,R Lai,M Biedenbender, H C Yen,B Allen

Microwave Symposium Digest, 1997., IEEE MTT-S International（1997）

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摘要

In this paper we present the development of a 6 Watt 24% PAE Ka-band power module with an associated power gain of 21.5 dB. The power module consists of a driver amplifier and two power amplifier chips. These MMIC amplifiers were fabricated with a 2-mil thick substrate using 0.15-/spl mu/m InGaAs/AlGaAs/GaAs HEMT technology. The driver amplifier is a fully matched single-ended design with an output power of 27.5 dBm, a 10.7 dB power gain and 27% PAE. We use a hybrid approach for the output power amplifier which consists of two partially-matched MMIC chips and a 8-way Wilkinson combiner fabricated on alumina substrate. The MMIC power amplifiers delivered a record power of 35.4 dBm (3.5 W) with a PAE of 28% and an associated power gain of 11.5 dB. The 8-way combiner has an insertion loss of 0.6 dB. We believe this is a new benchmark for power module using monolithic approach at this frequency range.

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关键词

hemt integrated circuits,iii-v semiconductors,mmic power amplifiers,aluminium compounds,driver circuits,field effect mmic,gallium arsenide,indium compounds,integrated circuit design,power combiners,0.15 micron,0.6 db,10.7 db,11.5 db,21.5 db,24 percent,27 percent,28 percent,3.5 w,6 w,8-way wilkinson combiner,hemt technology,ingaas-algaas-gaas,ingaas/algaas/gaas,ka-band,mmic power module,pae,driver amplifier,insertion loss,output power,partially-matched mmic chips,power gain,single-ended design,power generation,chip,power amplifier,gain

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