Front-end-of-line (FEOL) optimization for high-performance, high-reliable strained-Si MOSFETs; from virtual substrate to gate oxidation
international electron devices meeting（2004）
摘要
Front-end-of-line (FEOL) process parameters including virtual substrate (Si/Si1-xGex), shallow-trench-isolation (STI) process, and gate oxidation have strong effects on performance and reliability of strained-Si MOSFETs such as gate oxide integrity (GOI), threshold voltage (VTH roll-off, reliability behavior including junction breakdown and device isolation characteristics. It is found that gate oxide integrity can be improved by 1 order of magnitude by applying low-temperature, plasma oxidation process as compared with thermal oxidation, junction leakage and device isolation characteristics can be improved by 1 order of magnitude and by two times, respectively, by using low-defect virtual substrate and further defect-curing process, and parameters related with STI process such as thin SiN layer and oxide densification temperature must be optimized both to reduce junction leakage current and to improve device performance such as Ion-Ioff characteristics.
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关键词
mosfet,elemental semiconductors,isolation technology,optimisation,oxidation,semiconductor device reliability,silicon,substrates,feol optimization,ion-ioff characteristics,sti process,si-sige,defect-curing process,device isolation,front-end-of-line optimization,gate oxidation,gate oxide integrity,junction breakdown,junction leakage current,low-temperature plasma oxidation,oxide densification temperature,reliability behavior,shallow trench isolation,strained-si mosfet,thin sin layer,threshold voltage roll-off,virtual substrate,front end,threshold voltage,leakage current
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