Mechanism of on-current and off-current instabilities under electrical stress in polycrystalline silicon thin-film transistors
international reliability physics symposium（2005）
摘要
The On-current (I-on) and Off-current (I-off) instabilities of polycrystalline silicon thin-film transistors (poly-Si TFTs) were investigated under various electrical stress conditions. The stress-induced device degradation was studied by measuring the dependences of I-on and I-off on the drain/gate voltages. Using this technique, dissimilar variations of I-on and I-off after stress were observed. The differences can be attributed to the variances in the amount of charges trapped in the gate oxide and the spatial distributions of the trap states generated in the poly-Si channel. These results suggested a comprehensive model for the I-on and I-off instabilities of poly-Si TFTs.
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关键词
electron traps,elemental semiconductors,hole traps,hot carriers,interface states,semiconductor device reliability,silicon,thin film transistors,si,tft,device channel trap states,drain-avalanche-hot-carrier damage,electrical stress,gate oxide trapped charges,off-current instabilities,on-current instabilities,polycrystalline silicon thin-film transistors,stress-induced device degradation,voltage,tellurium,degradation,thin film transistor
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