A Physical Analytical Model For Lt-Gaas And Lt-Al0.3ga0.7as Misfet Devices

Rvvvj Rao, Tc Chong, Ls Tan,Ws Lau, Jj Liou

Shatin（1999）

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摘要

An accurate physical analytical model has been described for output current-voltage characteristics and for describing the behavior of electron in LT-GaAs and LT-Al0.3Ga0.7As MISFET devices. The model is derived from basic semiconductor charge analysis. In this model, the Chang-Fetterman equation is used to approximate the electron drift velocity versus electric field, Excellent agreement with experimental results is shown.

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关键词

III-V semiconductors,MISFET,aluminium compounds,gallium arsenide,semiconductor device models,Al0.3Ga0.7As,Chang-Fetterman equation,GaAs,LT-Al0.3Ga0.7As,LT-GaAs,MISFET devices,basic semiconductor charge analysis,electric field,electron drift velocity,output current-voltage characteristics,physical analytical model,

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