Compact differential InP-based HBT VCO's with a wide tuning range at W-band

Y Baeyens,R Pullella,C Dorschky,J P Mattia,R F Kopf,H S Tsai,Georgios Georgiou,R A Hamm,Y C Wang,Q Lee,Y K Chen

Microwave Symposium Digest. 2000 IEEE MTT-S International（2000）

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摘要

Compact monolithic integrated differential VCO's operating in W-band were realized using InP-based HBT's. The oscillators, with a total chip size of 0.6 mm by 0.35 mm, are based on a balanced Colpitts-type topology with a coplanar transmission line resonator. By varying the voltage across the base-collector junction of the HBT in the current mirror and by changing the current in the VCO, the oscillation frequency can be tuned between 84 and 106 GHz. At 100 GHz, a differential voltage swing of 400 mV is obtained, which should be sufficient to drive 100 Gb/s digital logic.

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关键词

iii-v semiconductors,bipolar mimic,circuit tuning,heterojunction bipolar transistors,indium compounds,millimetre wave oscillators,voltage-controlled oscillators,100 gbit/s,84 to 106 ghz,ehf,inp,inp-based hbt vco,w-band,balanced colpitts-type topology,base-collector junction,compact differential vco,coplanar transmission line resonator,current mirror,monolithic integrated vco,oscillation frequency tuning,wide tuning range,frequency,voltage,oscillations,chip,transmission line,digital logic,circuit topology

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