The Degradation Mode of Dual Metal-Gates/High-K CMOSFETs Induced by Bias-Temperature Instability

We have measured the Bias-Temperature Instability (BTI) effects on fully silicided-gate/Al2O3(EOT=1.7 nm) and metal-gates/LaAIO3(EOT=1.4 nm) CMOSFETs. Small ΔVtchanges of -33 and 34 mV are measured in fully silicided-gate/AI2O3CMOSFETs and reduce to -21 and 10 mV in metal-gates/LaAIO3devices after 10 MV/cm and 85°C stress. The extrapolated operation voltages for 10 years lifetime, at failure criteria of 50 m ΔVtunder 10 MV/cm and 85°C stress, are 1.12 and 1.2 V for silicided-gate/AI2O3and metal-gates/LaAIO3p-MOSFETs, respectively.