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Enhancement of Wafer Test/package Yields by Oxide-Capping of Microlens in CMOS Image Sensor

HS Oh,HJ Hong,JI Lee,SJ Park, KK Kwon, J Hwang

Cheju(2000)

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摘要
This paper reports the oxide-capping process of,microlens in CMOS image sensor and its effect on wafer test/package yields of the product. CMOS image sensors with 8 mum x 8 mum pixel size were fabricated by 0.5 mum CMOS logic process incorporated with color filter and microlens processes. After the formation of microlens, thin oxide film was deposited as a capping material, and finally pad windows were opened. From the analysis of the yield data, it is concluded that the oxide-capping of microlens guarantees the stable wafer test yield and also gives rise to noticeable increase of package yield of CMOS image sensors.
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关键词
CMOS image sensors,integrated circuit packaging,integrated circuit technology,integrated circuit testing,integrated circuit yield,microlenses,passivation,0.5 micron,CMOS image sensor,CMOS logic process,colour filter process,microlens,oxide-capping,package yields,pad window opening,passivation oxide,thin oxide film deposition,wafer test yields,yield data analysis
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