A 60GHz transmitter with integrated antenna in 0.18/spl mu/m SiGe BiCMOS technology

Chihusueh Wang,Yihsien Cho,Chinshen Lin,Huei Wang,Chunhsiung Chen,Dowchih Niu,Jiunyih Yeh,Ciwanying Lee, Jungchieh Chen

San Francisco, CA（2006）

引用 129|浏览10

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摘要

A 60GHz SiGe HBT transmitter IC with integrated antenna in a standard-bulk 0.18mum SiGe BiCMOS process is reported. This chip is composed of a VCO, a sub-harmonic mixer, a PA, and a tapered-slot antenna, all with differential designs. The measured results show 15.8dBm output power and 20.2dB conversion gain with 281mWdc power consumption

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关键词

bicmos integrated circuits,bipolar mimic,millimetre wave integrated circuits,radio transmitters,slot antennas,0.18 micron,20.2 db,281 mw,60 ghz,bicmos technology,hbt transmitter,sige,integrated antenna,subharmonic mixer,tapered-slot antenna

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