The uniform turn-on of the emitter turn-off thyristor

Zhenxue Xu,Yuming Bai,Bin Zhang,Alex Q. Huang

Applied Power Electronics Conference and Exposition, 2002. APEC 2002. Seventeenth Annual IEEE（2002）

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摘要

The emitter turn-off (ETO) thyristor is a new MOS- controlled thyristor that is suitable for use in high-power converters due to its improved switching performance and easy control. This paper analyzes the uniform turn-on process of the ETO for the first time. To achieve uniform turn-on, the required gate current amplitude and rise rate are characterized for different ETO prototypes. Experimental results show that the ETOs can be uniformly turned on. Correspondingly, the maximum anode current rise rate is improved and the minimum on-time is reduced.

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关键词

MOS-controlled thyristors,driver circuits,thyristor convertors,1 kA,4.5 kV,MOS controlled thyristor,control,emitter turn-off thyristor,gate current amplitude,gate drive circuit,high-power converters,maximum anode current rise rate,minimum on-time reduction,switching performance,uniform turn-on

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