Three-Dimensional Transient Interconnect Analysis With Regard to Mechanical Stress

Singapore(2006)

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摘要
We presented a transient electro-thermal analysis with STAP considering self-heating. Thermo-mechanical simulators, e.g. FEDOS, are coupled to provide appropriated input data for electromigration analysis to obtain predictive results. The presented electro-thermal results depict the high temperature gradients close to heat sources and heat sinks. Further regions of high risk of electromigration are presented as results of thermo-mechanical simulations. The vias as well as edges and corners of interconnects in general are highly stressed regions due to the mismatch of thermal volume expansion coefficients and due to weak material adhesion of material interfaces
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关键词
electromigration,heat sinks,integrated circuit interconnections,thermal analysis,thermal expansion,thermal stresses,3d transient interconnect analysis,stap,electromigration analysis,electrothermal analysis,heat sources,material adhesion,material interfaces,mechanical stress,self heating,thermal volume expansion coefficients,thermomechanical simulators,three dimensional,heat sink,thermal conductivity,microelectronics
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