Investigation of Charge Loss in Cycled NBit Cells via Field and Temperature Accelerations

W J Tsai,N K Zous,H Y Chen,Lenvis Liu,C C Yeh,Sam Chen,W P Lu,Tahui Wang,J Ku,Chihyuan Lu

San Jose, CA（2006）

引用 6|浏览32

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摘要

In nitride storage flash memories, the high-VT state retention loss induced by field and temperature acceleration is compared between single cells and products. Our result reveal that the charge loss path is the same no matter which accelerating methods is used. The traps created at the bottom oxide during P/E cycling provide such leak paths. In addition, the annealing of interface states would play a role in the VT loss during high-temperature bake

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关键词

annealing,flash memories,integrated circuit reliability,interface states,semiconductor storage,nbit cells,p/e cycling,bottom oxide,charge loss investigation,charge loss path,field accelerations,high-temperature bake,interface states annealing,leak paths,nitride storage flash memories,state retention loss,temperature accelerations,traps,temperature,tunneling,testing,power generation,acceleration,reactive power

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