Back-Channel, Depletion-Assisted, Gate-Induced Floating Body Effects in Cryogenically-Operated, 90 nm Strained Si SOI MOSFETs

Bongim Jun,R M Diestelhorst,Qingqing Liang,Greg Freeman,John D Cressler

Niagara Falls, NY（2006）

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摘要

The authors reported the floating body effects in 90nm partially-depleted, strained-silicon CMOS on SOI devices operating down to cryogenic temperatures. These devices also exhibit immunity to X-ray and proton irradiation without process hardening (Appaswamy et al, 2006) and thus are potentially suitable for space applications. One-to-one comparisons are made to conventional unstrained CMOS on SOI devices from the same 90 nm technology node

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关键词

mosfet,x-ray effects,cryogenic electronics,nanotechnology,silicon,silicon-on-insulator,90 nm,soi mosfet,soi devices,si,x-ray irradiation,back-channel cmos,cryogenic temperatures,depletion-assisted cmos,gate-induced floating body effects,proton irradiation,strained silicon,silicon on insulator

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