New Degradation Phenomena of Stress-Induced Voiding Inside via in Copper Interconnects

H Matsuyama,M Shiozu,T Kouno,Tatsuo Suzuki,Hideo Ehara,Seiji Otsuka,Takuma Hosoda,Takashi Nakamura,Yoshihiko Mizushima,M Miyajima,Keiji Shono

Phoenix, AZ（2007）

引用 12|浏览6

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摘要

Stress induced voiding inside vias has been investigated in detail using three different kinds of test patterns. Resistance increase which is caused by voiding inside via has been seen larger in "extrusion pattern" than in "wide pattern". The resistance shift depends upon the length of the narrow pattern within the "extrusion pattern". Our new finding is that resistance shift through 10Khour is dominated by the "body metal area". These phenomena can be explained with the effect of vacancy diffusion through the path of the copper and barrier metal side interface.

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关键词

copper,integrated circuit interconnections,vacancies (crystal),voids (solid),cu,barrier metal side interface,body metal area,copper interconnects,degradation phenomena,extrusion pattern,resistance shift,stress-induced voiding,vacancy diffusion,stress induced voiding,stress migration,voiding inside via,frequency,geometry,stress,shape,degradation,testing,immune system

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