Dual work function high-k/Metal Gate CMOS FinFETs

Muhammad M Hussain,Casey Smith,Prem Kumar Kalra,Jiwoon Yang, G Gebara,B Sassman,P D Kirsch,Prashant Majhi,Seungchul Song, Robert V Harris,Hsinghuang Tseng,R Jammy

Munich（2007）

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摘要

For the first time, a set of complementary metal oxide semiconductor (CMOS) FinFET devices with two different high-k/metal gate stacks of dual work function has been integrated on the same wafer to overcome the integration complexity. Two completely different metals deposited by atomic layer deposition have been integrated in a process that includes gate stack integration and dual metal gate etch. Excellent short channel characteristics with low drain induced barrier lowering (DIBL) and subthreshold swing DeltaSS have been observed with fairly symmetric VTh.

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关键词

cmos integrated circuits,mosfet,atomic layer deposition,etching,wafer-scale integration,work function,cmos finfet devices,complementary metal oxide semiconductor,drain induced barrier lowering,dual work function,high-k/metal gate stacks,short channel characteristics,subthreshold swing,wafer level integration

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