Performance and reliability characteristics of the band edge high-k/metal gate nMOSFETs with La-doped Hf-silicate gate dielectrics

Chang Yong Kang,C S Park,Dawei Heh,C Young,P D Kirsch,Hong Bae Park,Rino Choi, G Bersuker,J W Yang,B H Lee,J Lichtenwalner,Jesse S Jur,A I Kingon,R Jammy

Phoenix, AZ（2008）

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摘要

La-doped HfSiO samples showed lower Vth and Igate, which was attributed to the dipole formation at the high-k/SiO2 interface. With increasing SiOx content, significant mobility degradation was observed, most likely due to additional La- related charges in the interfacial layer. La-doped devices demonstrate better immunity in the PBTI test and low charge trapping efficiency compared to the control HfSiO.

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关键词

mosfet,hafnium compounds,high-k dielectric thin films,lanthanum,semiconductor device reliability,semiconductor doping,hfsiox,la-doped hf-silicate gate dielectrics,pbti test,charge trapping,high-k-metal gate nmosfet,reliability characteristics,stress,degradation,logic gates,dielectrics,leakage current

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