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Design of a current steering CMOS D/A converter with an adaptive control switch and a novel layout technique

Austin, TX(2008)

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摘要
While the CMOS analog circuits can be designed with the minimum-gate-length of the fabrication process in the alpha-power law MOSFET model, the length of a MOSFET gate has been chosen to be a larger scale than the minimum-gate-length in the conventional Shockleypsilas square model. In this paper, we describe a 6-b 100 MSPS CMOS current steering digital-to-analog converter (DAC) with the alpha-power law model. In order to improve the matching characteristics of the DAC current cell, moreover, we introduce a new and unique adaptive-control-switch (ACS) and a common current cell layout technique using a tournament algorithm. The prototype circuit has been fabricated with a Samsung 1.8 V, 0.18 mum, 1-poly, 5-metal CMOS technology. It occupies 0.52 mm2 of silicon area with 15.8 mW power consumption. The fabricated chip area and the measured power dissipation are reduced by 30% and 25% over conventional ones, respectively.
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关键词
cmos analogue integrated circuits,digital-analogue conversion,field effect transistor switches,cmos analog circuits,cmos current steering digital-to-analog converter,shockley square model,adaptive control switch,alpha-power law mosfet model,cell layout technique,current steering cmos d-a converter,layout technique,power 15.8 mw,size 0.18 mum,voltage 1.8 v,alpha-power law,current steering,dac,small area,fabrication,routing,power mosfet,predictive models,fluctuations,electric potential,prototypes,power law,data structures,electricity,accuracy,games,mathematical model,layout,semiconductor device modeling,saturation magnetization,data models,linearity,noise,algorithm design and analysis,computer architecture,magnetic circuits,boolean functions,adaptive control,analog circuits,cmos integrated circuits,chip,power dissipation,system on a chip,modulation,logic gates,switches,cmos technology,computational modeling,transistors,neodymium,silicon
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