Measurement of the lifetimes of photo-excited carriers in type-I and type-II quantum well materials

Guoyun Ru,Fowsen Choa,Xing Wei,Gang Chen,Jacob B Khurgin

Long Beach, CA（2006）

引用 2|浏览2

暂无评分

摘要

Room temperature carrier lifetimes of both type-I and type-II InP-based multiple quantum wells near optical transparency were measured using the pump-probe technique. Longer carrier lifetime in the type-II sample was observed.

查看译文

关键词

iii-v semiconductors,carrier lifetime,indium compounds,semiconductor optical amplifiers,semiconductor quantum wells,transparency,inp,optical transparency,photoexcited carrier lifetimes,pump-probe technique,semiconductor optical amplifier,type-i quantum well materials,type-ii quantum well materials,(060.4510) optical communications,(250.5980) semiconductor optical amplifiers,optical communications,optical pumping,stimulated emission,nonlinear optics,quantum well,optical communication,room temperature,optoelectronics,absorption

AI 理解论文

溯源树

样例

生成溯源树，研究论文发展脉络

Chat Paper

正在生成论文摘要