Can Atmospheric Neutrons Induce Soft Errors in nand Floating Gate Memories?

Electron Device Letters, IEEE(2009)

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摘要
Atmospheric neutrons can interact with the matter inside a microelectronic chip and generate ionizing particles, which in turn can change the state of one or more memory bits [soft error (SE)]. In this letter, we show that SEs are possible in Flash memories, although with extremely low probabilities. While this problem will increase for future technologies, we do not expect SEs to be the reliability limiting factor for further floating gate scaling.
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circuit reliability,flash memories,logic gates,neutron effects,nand floating gate memories,atmospheric neutrons,floating gate scaling,reliability limiting factor,soft errors,atmospheric neutron,soft error (se) rate,nonvolatile memory,limiting factor,atmosphere,microelectronics,soft error,neutrons,physics,space technology,chip
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