Gain and alpha factor of intermixed InAs/InAlGaAs quantum-dash lasers

Chu Chen, Yiching Wang,Chee Leong Tan,H S Djie,B S Ooi,J C M Hwang

Singapore（2008）

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摘要

We study the optical gain and alpha factor of InAs/InAlGaAs quantum-dash lasers on InP substrate after being subjected to the postgrowth intermixing process. The intermixing was achieved using dielectric capping process that involves the deposition of dielectric film and subsequent rapid thermal annealing. Compared to the un-intermixed laser, we found that the intermixed lasers with a 93 nm bandgap blue-shift exhibit good material quality with improved differential gain and comparable alpha factor.

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关键词

iii-v semiconductors,aluminium compounds,gallium arsenide,indium compounds,quantum dash lasers,rapid thermal annealing,spectral line shift,inas-inalgaas,inp substrate,alpha factor,blue-shift,dielectric capping,intermixed quantum-dash lasers,optical gain,temperature measurement,gain,refractive index,quantum dots,temperature

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