Effect of P-doping on temperature and dynamic performances of 1550nm InAs/InP Quantum Dash based lasers

F Lelarge,R Brenot,B Rousseau,F Martin,F Poingt,L Legouezigou,O Le Gouezigou,F Pommereau,A Accard,D Make,N Chimot,F Vandijk

Newport Beach, CA（2009）

引用 6|浏览25

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摘要

The effect of p-doping on both temperature and dynamic performances of 1.55mum Quantum Dashes lasers is investigated in detail. A relaxation frequency up to 13.5GHz and a damping factor as low as 0.22ns are demonstrated. The origin of this drastic improvement of the dynamic properties of Quantum Dashes lasers is discussed.

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关键词

iii-v semiconductors,indium compounds,quantum dash lasers,semiconductor doping,inas-inp,damping factor,dynamic properties,p-doping effect,quantum dashes lasers,relaxation frequency,wavelength 1550 nm,resonant frequency,lasers,temperature,modulation,resonance,semiconductor lasers,quantum dots,bandwidth

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