26 Gbit/s Direct Modulation of AlGaInAs/InP Lasers with Ridge-Waveguide Structure Buried by Benzocyclobutene Polymer

Hideki Yagi,Kenji Koyama,Yutaka Onishi,Hiroyuki Yoshinaga,Hiroyuki Ichikawa,Noriaki Kaida,Toshio Nomaguchi,Kenji Hiratsuka,Katsumi Uesaka

Newport Beach, CA（2009）

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摘要

26 Gbit/s direct modulation of 1.3degm wavelength AlGaInAs/InP distributed feedback lasers with the ridge-waveguide structure (ridge width of 1.0degm) buried by the benzocyclobutene polymer was achieved. The high electrical bandwidth of more than 20 GHz was acquired with this ridge-waveguide structure. Consequently, a clear eye-opening with extinction ratio of 6 dB was confirmed in the measurement temperature of 25degC.

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关键词

aluminium compounds,distributed feedback lasers,gallium compounds,indium compounds,optical modulation,optical waveguides,polymers,semiconductor lasers,algainas-inp,benzocyclobutene polymer,direct modulation,electrical bandwidth,extinction ratio,ridge-waveguide structure,temperature 25 c,bandwidth,modulation,distributed feedback laser,lasers,lithography

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