SiGe:C profile optimization for low noise performance

P H C Magnee,R Van Dalen,Hans Mertens,T Vanhoucke, B Van Velzen, Paul Huiskamp, I Brunets, J J T M Donkers, D B M Klaassen

Bipolar/BiCMOS Circuits and Technology Meeting（2011）

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摘要

Today's state-of-the-art SiGe BiCMOS processes show impressive high-frequency performance, with fT and fMAX exceeding 500GHz. However, SiGe can also offer significant performance gain at more moderate application frequencies. In this paper we discuss the optimization of SiGe heterojunction bipolar transistors (HBTs) for very low noise applications in the 2-10GHz range. By careful tuning of the base-profile, minimum noise figures below 0.55dB and 0.35dB are obtained at 10GHz and 2GHz respectively.

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关键词

bicmos integrated circuits,ge-si alloys,heterojunction bipolar transistors,microwave bipolar transistors,semiconductor device noise,bicmos,hbt,sige,frequency 2 ghz to 10 ghz,frequency 500 ghz,noise figures,profile optimization,integrated circuit noise,silicon bipolar/bicmos process technology

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