Study of Optoelectronic Sampler Linearity for Analog-to-Digital Conversion of RF Signals

Delord, J.-M.,Roux, J.-F.,Coutaz, J.-L.,Breuil, N.

Photonics Technology Letters, IEEE（2009）

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摘要

Photoconductive sampling of 10-GHz radio-frequency (RF) signal is demonstrated using interdigitated photoswitches made from low-temperature grown GaAs. We study the linearity of the device for RF input power ranging from 3 to 20 dBm. For moderate levels, the sampler shows a spurious-free dynamic range (SFDR) better than 40 dB. For the largest values, it exhibits a nonlinear response that deteriorates both SFDR and resolution. This nonlinearity is attributed to drift velocity saturation in the semiconductor material.

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关键词

III-V semiconductors,analogue-digital conversion,gallium arsenide,optical switches,optoelectronic devices,GaAs,analog-to-digital conversion,drift velocity saturation,frequency 10 GHz,interdigitated photoswitches,low-temperature grown,optoelectronic sampler linearity,photoconductive sampling,radio-frequency signal,Analog–digital conversion,MSM devices,nonlinear distorsion,optoelectronic devices,photoconductive devices

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