Monte Carlo Simulation Of Inalas/Inalgaas Tandem Avalanche Photodiodes
Quantum Electronics, IEEE Journal of（2012）
摘要
Monte Carlo simulation is performed on a low-noise, three-stage tandem avalanche photodiode with InAlAs/InAlGaAs impact-ionization-engineered multiplication region. The simulated excess noise factor agrees well with experimental measurements. A modified structure to further reduce the excess noise is proposed.
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关键词
Avalanche photodiode,impactionization,Monte Carlo simulation
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