Multi-phase 1GHz voltage doubler charge-pump in 32nm logic process

Multi-phase 1GHz charge-pump in 32nm logic process demonstrates a compact area (159X42µm2) for boosting 2Vth to 3–4Vth. Self contained clocking with metal-finger capacitors enable embedding voltage boost functionality in close proximity to digital logic for supplying low current Vmin requirement of logic blocks. Multi-phase operation avoids the need for a storage reservoir capacitor, enables fast (5ns) ON/OFF output transition, and provides a gated power delivery solution for blocks having state-preservation Vmin requirements. Charge pump operates as 1V to 2V doubler with ≫5mA capability.