Phase Change Memory Advanced Electrical Characterization for Conventional and Alternative Applications
2012 IEEE INTERNATIONAL CONFERENCE ON MICROELECTRONIC TEST STRUCTURES (ICMTS)(2012)
摘要
Research on phase change chalcogenide materials and Phase Change Memory (PCM) devices, is increasing and the recent proposals of alternative applications of PCM such as emulating the biological synapse in future bio-inspired computing systems has led to the need of fast, versatile and accurate solutions for advanced electrical characterization. In this paper, we introduce a new automated test solution capable of handling the requirements of High Frequency (HF) pulses, and DC resistance measurement used to characterize chalcogenide material integrated at the cell level. Improvement in measurement of SET and RESET threshold voltages is confirmed due to increased stability of the access resistance. The improved accuracy of the test system and its ability of fast statistical screening per wafer allow for appropriate characterization of the PCM for both conventional memory applications, and upcoming synaptic plasticity applications.
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关键词
electric reactance measurement,integrated circuit testing,neurophysiology,phase change materials,phase change memories,DC resistance measurement,HF pulses,PCM devices,RESET threshold voltage,access resistance stability,alternative applications,automated test solution,biological synapse,cell level,conventional application,conventional memory applications,future bioinspired computing systems,high frequency pulses,phase change chalcogenide materials,phase change memory advanced electrical characterization,phase change memory devices,statistical screening per wafer,synaptic plasticity applications,test system
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