Fractal structures for low-resistance large area AlGaN/GaN power transistors

R Reiner,P Waltereit,F Benkhelifa,S Muller,H Walcher,Steffen Wagner,R Quay,Michael Schlechtweg,Oliver Ambacher

Power Semiconductor Devices and ICs（2012）

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摘要

This work introduces a new design approach for the use of fractal structures for low-resistance large area transistors structures. Aspects of layout with adapted current density and high-area utilization are considered. Furthermore the work presents a realization of fractal structures in AlGaN/GaN technology. Both static and dynamic behaviors are characterized. The fabricated devices achieve a breakdown voltage of VBR >; 700V and on-state currents of ID = 40A at VGS = 1V.

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关键词

iii-v semiconductors,aluminium compounds,gallium compounds,power transistors,wide band gap semiconductors,algan-gan,breakdown voltage,current 40 a,current density,dynamic behavior,fabricated device,fractal structures,high-area utilization,low-resistance large-area power transistors,on-state current,static behavior,voltage 1 v,fractal design,gallium nitride,lateral flow structure,natural flow system,self similarity,logic gates,transistors,resistance,metallization,fractals

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