The impact of melting during reset operation on the reliability of phase change memory

Peiying Du,Jauyi Wu,Tzuhsuan Hsu,Minghsiu Lee,Tienyen Wang,Huaiyu Cheng,Erhkun Lai,S Lai,Hsianglan Lung,Sangbum Kim,M Brightsky,Yu Zhu,Surbhi Mittal,Roger W Cheek,Simone Raoux,Eric A Joseph,Alejandro G Schrott,Jing Li,C Lam

Reliability Physics Symposium（2012）

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摘要

Operation impact on endurance performance in GST-based phase change memory is investigated from small arrays to large test chips. SET operation induced electromigration and phase segregation are observed. For the first time, the RESET melting healing effect is proposed to partially repair the SET induced damage and further extend the endurance. This concept can be easily implemented by accordingly designing the control circuits.

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关键词

arrays,circuit reliability,electromigration,melting,phase change memories,segregation,gst-based phase change memory,reset melting healing effect,set induced damage,set operation,control circuits,large test chips,operation impact,phase change memory reliability,phase segregation,reset operation,endurance,phasechange memory (pcm),reliability,phase change memory,maintenance engineering,resistance,tin,conductivity

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