A novel gate-all-around ultra-thin p-channel poly-Si TFT functioning as transistor and flash memory with silicon nanocrystals

Hung-Bin Chen,Shih-Han Lin,Jia-Jiun Wu,Yung-Chun Wu

Silicon Nanoelectronics Workshop（2012）

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摘要

A novel gate-all-around ultra-thin p-channel poly-Si TFT functioning as transistor and flash memory with silicon nanocrystals have been successfully demonstrated. The process is simple and mask free. For the 3-nm-thick channel devices, the S.S. of 88 mV/dec and Ion/Ioff ratio of more than 108 can be achieved. Extreme low applied voltage for band-to-band-tunneling-induced hot electron injection tunneling (BBHE) operation and excellent retention are proposed.

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关键词

elemental semiconductors,flash memories,nanostructured materials,silicon,thin film transistors,tunnelling,Ion-Ioff ratio,Si,band-band-tunneling-induced hot electron injection tunneling operation,channel devices,flash memory,gate-all-around ultrathin p-channel poly-Si TFT,low applied voltage,silicon nanocrystals,size 3 nm,

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