Electro-thermal modeling of nano-scale devices
Leuven（2009）
摘要
In this paper we present simulation results obtained with our electro-thermal device simulator when modeling different technology generations of FD-SOI devices. In particular, we stress out the importance of the temperature boundary conditions for digital and analog circuits and the use of the full model which takes into account both temperature and thickness dependence (which is particularly important for thin silicon films) of the thermal conductivity.
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关键词
analogue circuits,circuit simulation,digital circuits,elemental semiconductors,nanoelectronics,silicon,silicon-on-insulator,thermal conductivity,si,analog circuits,electro-thermal device simulator,electro-thermal modeling,fully-depleted silicon-on-insulator device,nanoscale devices,temperature boundary conditions,thin silicon films,fdsoi devices,particle-based device simulations,silicon on insulator
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