InGaAs high speed communication photodiodes

Mohand Achouche,G Glastre,Christophe Caillaud,M Lahrichi,Daniele Carpentier

Belek-Antalya（2009）

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摘要

This paper reviews trends in InGaAs based communication photodetectors design. In particular, new avalanche structures using Al(Ga)(In)As large bandgap material used for high sensitivity photoreceivers in access network will be described as well as highly linear uni-travelling-carrier UTC photodiodes, well suited for high bit rates using coherent detection or for analog photonic links.

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关键词

iii-v semiconductors,aluminium compounds,avalanche photodiodes,gallium arsenide,indium compounds,optical receivers,photodetectors,alinas-ingaas,inp-ingaas,access network,analog photonic links,avalanche structures,coherent detection,communication photodetectors,high speed communication photodiodes,highly linear uni-travelling-carrier photodiodes,large bandgap material,photoreceivers,noise,bandwidth,sensitivity

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