High-speed GeSi EA modulator at 1550 nm

Dazeng Feng,Shirong Liao,Hong Liang,Joan Fong,B J Bijlani,Roshanak Shafiiha,B Jonathan Luff,Ying Luo,J E Cunningham,Ashok V Krishnamoorthy,Mehdi Asghari

Group IV Photonics（2012）

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摘要

We demonstrate a high speed GeSi EA modulator with a broad operating wavelength range of over 30 nm near 1550 nm and a 3 dB bandwidth of 40.7 GHz at 2.8 V reverse bias.

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关键词

ge-si alloys,electro-optical modulation,electroabsorption,integrated optics,semiconductor materials,gesi,broad operating wavelength,frequency 40.7 ghz,high-speed gesi ea modulator,reverse bias,voltage 2.8 v,wavelength 1550 nm,electro-optical devices,photonic integrated circuits,modulator

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