Resistive Switching in High-K Dielectrics for Non-Volatile Memory Applications

R. G. Elliman,M. N. Saleh,D. K. Venkatachalam,T-H. Kim,K. Belay,F. Karouta

2012 CONFERENCE ON OPTOELECTRONIC AND MICROELECTRONIC MATERIALS AND DEVICES (COMMAD 2012)（2012）

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摘要

We review our recent research on resistive switching in transition metal oxides for use as nonvolatile resistive random access memory (ReRAM), including the effect of film microstructure on switching characteristics and new data on metal-bridge memory.

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关键词

high-k dielectric thin films,metals,random-access storage,ReRAM,film microstructure,high-k dielectrics,metal-bridge memory,nonvolatile memory,nonvolatile resistive random access memory,resistive switching,switching characteristics,transition metal oxide

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