Growths of ultra high density InGaN-based quantum dots on self-assembled diblock copolymer nanopatterns

Guangyu Liu,Hongping Zhao,Joo Hyung Park,L J Mawst,Nelson Tansu

CLEO) and Quantum Electronics and Laser Science Conference（2010）

引用 23|浏览5

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摘要

Selective area growths of highly-uniform InGaN quantum dots (QDs) on dielectric nanopatterns defined by self-assembled diblock copolymer were demonstrated with ultra-high QDs density of 8×1010 cm-2, which represents the highest QDs density reported for nitride-based QDs.

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关键词

iii-v semiconductors,indium compounds,nanophotonics,optical fabrication,polymer blends,quantum dots,wide band gap semiconductors,ingan,growths of ultra high density quantum dots,selective area growths,self-assembled diblock copolymer nanopatterns,light emitting diodes,epitaxial growth,radiative recombination,self assembly,scanning electron microscopy,dielectrics,capacitive sensors,quantum dot

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