A Wide Temperature, Radiation Tolerant, CMOS-Compatible Precision Voltage Referencefor Extreme Radiation Environment Instrumentation Systems

Benjamin M Mccue,Benjamin J Blalock,Britton, C.L., Potts, J., J C Kemerling, K Isihara,M T Leines

Nuclear Science, IEEE Transactions（2013）

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摘要

Many design techniques have been incorporated into modern CMOS design practices to improve radiation tolerance of integrated circuits. Annular-gate NMOS structures have been proven to be significantly more radiation tolerant than the standard, straight-gate variety. Many circuits can be designed using the annular-gate NMOS and the inherently radiation tolerant PMOS. Bandgap reference circuits, however, typically require p-n junction diodes. These p-n junction diodes are the dominating factor in radiation degradation in bandgap reference circuits. This paper proposes a different approach to bandgap reference design to alleviate the radiation susceptibility presented by the p-n junction diodes.

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关键词

CMOS integrated circuits,integrated circuit design,nuclear electronics,p-n junctions,radiation hardening (electronics),reference circuits,semiconductor diodes,CMOS-compatible precision voltage reference,annular-gate NMOS structures,bandgap reference circuits,design techniques,extreme radiation environment instrumentation systems,integrated circuits,modern CMOS design,p-n junction diodes,radiation degradation,radiation susceptibility,radiation tolerance,radiation tolerant PMOS,Bandgap reference,CMOS,dynamic threshold MOSFET (DTMOS),radiation hardening by design (RHBD),total ionizing dose (TID) radiation

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