1.9 μm hybrid silicon/iii-v semiconductor laser

Po Dong,T C Hu, Leiqi Zhang,M Dinu,R F Kopf, Atsushi Tate,L L Buhl,D T Neilson,Xiaohua Luo,Tsungyang Liow,Guoqiang Lo,Yenkuang Chen

Electronics Letters（2013）

引用 10|浏览43

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摘要

A 1.9 μm hybrid silicon/III-V laser based on a wafer bonding technique is reported. The gain materials are InGaAs multiple quantum wells grown on InP substrate, with strain compensation between barriers and wells. The III-V wafer is bonded to a silicon-on-insulator wafer with processed silicon waveguides and transition tapers. Laser emission with a threshold current of 95 mA at room temperature and 45 mA at 5 °C is demonstrated.

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关键词

iii-v semiconductors,compensation,elemental semiconductors,gallium arsenide,indium compounds,laser transitions,quantum well lasers,silicon,silicon-on-insulator,wafer bonding,waveguide lasers,ingaas-si,inp,si,current 45 ma,current 95 ma,hybrid silicon-iii-v semiconductor laser,multiple quantum wells,processed silicon waveguides,silicon-on-insulator wafer,strain compensation,temperature 293 k to 298 k,temperature 5 degc,threshold current,transition tapers,wafer bonding technique,wavelength 1.9 mum,silicon on insulator

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