Self-heat reliability considerations on Intel's 22nm Tri-Gate technology

Coorg R Prasad, Li Jiang,D K Singh,M Agostinelli,C Auth,Ping Bai, T M Eiles,J Hicks,C H Jan, Khyati Mistry,Sriraam Natarajan, Ben Niu,P Packan,Daniel Pantuso,I Post,Stephen M Ramey,Adele E Schmitz, Bernhard Sell,S Suthram,Julian B Thomas,Chiayin Tsai,P Vandervoorn

Reliability Physics Symposium（2013）

引用 63|浏览45

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摘要

This paper describes various measurements on self-heat performed on Intel's 22nm process technology, and outlines its reliability implications. Comparisons to thermal modeling results and analytical data show excellent matching.

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关键词

semiconductor device reliability,transistors,intel process technology,self-heat reliability considerations,size 22 nm,thermal modeling,tri-gate transistor architecture,heating,temperature measurement,logic gates

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