Extremely-high sensitive terahertz detector based on dual-grating gate InP-HEMTs

Y Kurita,Kaoru Kobayashi,Taiichi Otsuji,Guillaume Ducournau,Y M Meziani,V V Popov,W Knap

Indium Phosphide and Related Materials（2013）

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摘要

We report on an extremely-high sensitive terahertz (THz) detector based on our original asymmetric dual-grating gate high electron mobility transistors (A-DGG HEMTs) designed and fabricated using InAlAs/InGaAs/InP material systems. The obtained responsivity is 22.7 kV/W at 200 GHz. To the best of our knowledge, this value is the record responsivity ever reported for this frequency range at room temperature.

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关键词

iii-v semiconductors,aluminium compounds,diffraction gratings,gallium arsenide,high electron mobility transistors,indium compounds,microwave field effect transistors,photodetectors,terahertz materials,terahertz wave detectors,hemt design,hemt fabrication,inalas-ingaas-inp,dual grating gate inp hemt,frequency 200 ghz,high sensitive terahertz detector,detection,high electron mobility transistor,terahertz,two-dimensional plasmon,plasmons,detectors,logic gates

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